EDC
JNTUH BITS
NOTE: Don't think that these bits only will be
repeated in first mid.Prepare concepts thoroughly then solve these bits .These
bits to cross check your knowledge in subject.
UNIT-1:P-N JUNCTION DIODE
SECTION-I: MULTIPLE
CHOICE QUESTIONS
1. The depletion region
in an open circuited p-n junction contains___ [a ]
(a) Electrons (b) Holes (c) uncovered
immobile impurity ions (d) Neutralized impurity Atoms
2. Cut in voltage for Ge
diode is approximately _______ V [ a]
(a) 0.2 (b) 0.6 (c) 1.1 v (d)1.0
3. The reverse
saturation current in a Pn diode [ c]
a) Increase b) decreases c) remains
constant with increase of bias d) remains same
4. The reverse
saturation current for a Si diode varies ( T is temperature) [ d]
a) T3 b) T2 c) T
d) T1.5
5. The equation governing the law of the junction
is __________
6. The area at the junction of p-type
and n-type materials that has lost its majority carriers is called the [d ]
A) n- region B) p- region C) breakdown region D) depletion
region
SECTION-II: FILL IN
THE BLANKS
1. The straight line
through the quiescent operating point having slope corresponding to the ac load
resistance is load
line
2. Expression for the diffusion
capacitance cD in terms of Lp & Dp is Lp2/Dp*g
3. The Depletion layer capacitance is
the capacitance associated with REVERSE BIASED p-n
junction diode.
4. The depletion region penetrates
more into the LIGHTLY DOPED region.
5. The forbidden energy gap for
germanium is 0.72ev
6. In a PN-Junction, the region containing
the uncompensated acceptor and donor ions is called Depletion region
7. When holes leave the p-material to
fill electrons in the n-material, the process is called Diffusion
Prepared By
Shailaja&Srilatha